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| PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone ADE-208-097A (Z) 2nd. Edition July 1996 Application For GSM CLASS2 890 to 915 MHz Features * Low power control current: 0.9 mA Typ * High speed switching: 1.5 sec Typ * Wide power control range: 100 dB Typ Pin Arrangement * RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0121 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 FB1 C2 FB2 C1 Z2 Pin VAPC VDD Pout C1 = 0.01 F (Ceramic chip capacitor) C2 = 330 F (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 (Microstrip line) Absolute Maximum Ratings (Tc = 25C) Item Supply voltage Supply current APC voltage Input power Operating case temperature Storage temperature Symbol VDD IDD VAPC Pin Tc (op) Tstg Rating 17 6 8 20 Unit V A V mW C C -30 to +110 -40 to +110 PF0121 Electrical Characteristics (Tc = 25C) Item Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol IDS T 2nd H.D. 3rd H.D. Min Typ Max 500 Unit A % dBc dBc Test Condition VDD = 17 V, VAPC = 0 V Pin = 2 mW, VDD = 12.5 V, Pout = 13 W (at APC controlled), RL = Rg = 50 , Tc = 25C -- 30 -- 35 -- -40 -45 3 -- -- -50 -55 2 23 VSWR (in) -- Pout (1) 17 -- W Pin = 2 mW, VDD = 12.5 V, VAPC = 7 V, RL =Rg = 50 , Tc = 25C Pin = 2 mW, VDD = 10.3V, VAPC = 7 V, RL = Rg = 50 , Tc = 80C Pin = 2 mW, VDD = 12.5 V, VAPC = 0.5 V, RL = Rg = 50 , Tc = 25C Pin = 2 mW, VDD = 12.5 V, Pout = 13 W, RL = Rg = 50 , Tc = 25C Pin = 2 mW, VDD = 12.5 V, Pout 13 W (at APC controlled), Rg = 50 , Tc = 25C, Output VSWR = 20:1 All phases -- Output power (2) Isolation Pout (2) 9 12 -- -40 W dBm -- -- -60 Switching time tr, tf -- 1.5 2 s Stability -- No parasitic oscillation -- Test System Diagram S.G Power Meter L.P.F 3dB ATT VAPC VDD Spectrum Analyzer Test Fixture Directional Coupler Directional Coupler RF SW. Power Meter Phase Shifter Short PF0121 Switching Time Test Diagram VDD=12.5 V S.G Pin P.G f=10 kHz D.U.T Pout 1SS106 Z=50 2p 2p 1SS106 2.2 k Oscillo Scope Vout 100p Vout tr tf Power Meter 50% VAPC 95% 5% Duty=1/8 50% VAPC Test Fixture Pattern Unit: mm 26.5 3.5 2.88 16 4.5 3 2.88 64 28 4 VAPC VDD 80 3.5 1.5 2.88 4 4 15 100 Grass Epoxy Double sided PCB (t = 1.6 mm, r = 4.8) C1=0.01F (Ceramic Chip Capacitor) C2=330F (Aluminum Electrolyte Capacitor) L1=L2 : BLO2RN1-R62 (Manufacturer : MURATA) or equivalent (Ferrite Bead Inductor) The coefficient of RF line loss in the P.C.B is showed bellow. 1/ (S21)2 = 1/ (0.9805)2 = 1.068 16.5 4 2.88 PF0121 Mechanical Characteristics Item Torque for screw up the heatsink flange Warp size of the heatsink flange: S Conditions M3 Screw Bolts Spec 4 to 6 kg*cm S=0 +0.3/-0 mm S Note for Use * Unevenness and distortion at the surface of the heatsink attached module should be less than 0.05 mm. * It should not be existed any dust between module and heatsink. * MODULE should be separated from PCB less than 1.5 mm. * Soldering temperature and soldering time should be less than 230C, 10 sec. (Soldering position spaced from the root point of the lead frame: 2 mm) * Recommendation of thermal joint compounds is TYPE G746. (Manufacturer: Shin-Etsu Chemical, Co., Ltd.) * To protect devices from electro-static damage, soldering iron, measuring-equipment and human body etc. should be grounded. * Torque for screw up the heatsink flange should be 4 to 6 kg * cm with M3 screw bolts. * Don't solder the flange directly. * It should make the lead frame as straight as possible. * The module should be screwed up before lead soldering. * It should not be given mechanical and thermal stress to lead and flange of the module. * When the external parts (Isolator, Duplexer, etc.) of the module are changed, the electrical characteristics should be evaluated enough. * Don't washing the module except lead pins. * To get good stability, ground impedance between the module GND flange and PCB GND pattern should be designed as low as possible. PF0121 Characteristics Curve VAPC, T, VSWR (in) vs. VDD (1) 6 10 f=890 MHz, Pin=2 mW Pout=13 W, Tc=25C, Rg=Rl=50 5 Apc Voltage VAPC (V) 8 T 40 Efficiency T (%) Efficiency T (%) 50 V.S.W.R. (in) 4 6 VAPC 4 30 3 20 2 2 VSWRin 10 1 0 10 11 12 13 14 15 0 16 Supply Voltage VDD (V) VAPC, T, VSWR (in) vs. VDD (2) 6 10 f=915 MHz, Pin=2 mW Pout=13 W, Tc=25C, Rg=Rl=50 5 Apc Voltage VAPC (V) 8 T 6 30 40 50 V.S.W.R. (in) 4 3 4 VAPC 20 2 2 VSWRin 10 1 0 10 11 12 13 14 15 0 16 Supply Voltage VDD (V) PF0121 T, Pout vs. VAPC (1) 50 35 f = 890 MHz VDD=12.5 V V =15.6 V Pin = 2 mW DD 12.5 V 30 Tc = 25C Rg = Rl = 50 10.8 V 25 15.6 V 30 12.5 V 20 10.8 V 20 T 10 10 Pout 0 0 2 4 Apc Voltage VAPC (V) 6 8 5 0 15 Output Power Pout (W) Output Power Pout (W) 40 Efficiency T (%) T, Pout vs. VAPC (2) 50 f = 915 MHz Pin = 2 mW Tc = 25C Rg = Rl = 50 VDD=15.6 V VDD=15.6 V 12.5 V 10.8 V 30 T 20 12.5 V 20 10.8 V 15 10 10 Pout 0 0 2 4 Apc Voltage VAPC (V) 6 8 5 0 25 35 30 40 Efficiency T (%) PF0121 VAPC, T, VSWR (in) vs. Pin (1) 6 10 f=890 MHz, VDD=12.5 V, Pout=13 W, Tc=25C, Rg=Rl=50 5 Apc Voltage VAPC (V) 8 T 6 30 40 Efficiency T (%) Efficiency T (%) 50 V.S.W.R. (in) 4 3 4 VAPC 2 20 2 10 VSWRin 0 2 4 6 8 1 0 0 10 Input Power Pin (mW) VAPC, T, VSWR (in) vs. Pin (2) 6 10 f=915 MHz, VDD=12.5 V, Pout=13 W, Tc=25C, Rg=Rl=50 5 Apc Voltage VAPC (V) 8 T 40 50 V.S.W.R. (in) 4 6 30 3 4 VAPC 2 VSWRin 20 2 10 1 0 0 2 4 6 8 Input Power Pin (mW) 0 10 PF0121 VAPC, T, VSWR (in) vs. Frequency 6 10 Pin=2 mW, VDD=12.5 V, Pout=13 W, Tc=25C, Rg=Rl=50 5 Apc Voltage VAPC (V) 8 T 6 30 Efficiency T (%) 40 50 V.S.W.R. (in) 4 3 4 VAPC 2 VSWRin 895 900 905 910 20 2 10 1 0 890 0 915 Frequency f (MHz) PF0121 Package Dimensions Unit: mm 12.7 0.5 11.0 0.3 60.5 0.5 57.5 0.5 R1.6 1 2.3 0.2 0.6 5.0 + 0.3 - 2 3 45 49.8 0.5 3.3 9.2 1 8.0 1 Hitachi code EIAJ code JEDEC code RF-B2 -- -- 0.25 22.0 1 13.0 1 51 0.3 0.5 + 0.2 - 6.35 0.5 |
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